Scia Systems GmbH

scia Mill 300

Structuring of Complex Multilayers on 300 mm Wafers

The scia Mill 300 is designed for ion beam etching of various substrate materials with up to 300 mm dia. Different end point detection systems allow accurate process control, and the system's full reactive gas compatibility enables reactive etch processes with improved selectivity and rate. Due to the flexible design of the scia Mill 300, the system can be used both for high-volume production with cassette loading as well as for small scale production with a single substrate load-lock.

FEATURES & BENEFITS

• Etching angle adjustment with tiltable and rotatable substrate holder
• Excellent uniformity without shaper
• Enhanced selectivity and rate with reactive gases
• Process control with exact SIMS based or optical end point detection
• Processing of wafers with photoresist masks due to good wafer cooling
• Fully automatic cassette handling in variable cluster layouts including SECS/GEM communication