Scia Systems GmbH

scia Mill 200

Full Surface Ion Beam Etching on 200 mm Wafers

The scia Mill 200 is designed for structuring of complex multilayers of various materials. For an exact process control different end point detection systems can be equipped. With its fully reactive gas compatibility the system enables reactive etching processes with enhanced selectivity and rate. The flexible design of the scia Mill 200 allows to adapt it as single substrate version as well as in high volume production cluster layout with up to three process chambers and two cassette load locks. 

FEATURES & BENEFITS

• Etching angle adjustment with tiltable and rotatable substrate holder
• Excellent uniformity without shaper
• Enhanced selectivity and rate with reactive gases
• Process control with exact SIMS based or optical end point detection
• Processing of wafers with photoresist masks due to good wafer cooling
• Fully automatic cassette handling in variable cluster layouts including SECS/GEM communication